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2SK3481-S-AZ PDF预览

2SK3481-S-AZ

更新时间: 2024-09-24 13:04:27
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2SK3481-S-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3481  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3481  
The 2SK3481 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3481-S  
FEATURES  
2SK3481-ZJ  
TO-263  
Super low on-state resistance:  
2SK3481-Z  
TO-220SMDNote  
DS(on)1  
GS  
D
R
R
= 50 mMAX. (V = 10 V, I = 15 A)  
Note TO-220SMD package is produced only  
DS(on)2  
GS  
D
= 58 mMAX. (V = 4.5 V, I = 15 A)  
in Japan.  
iss  
iss  
Low C : C = 2300 pF TYP.  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
100  
±20  
V
V
A
A
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
C
D(DC)  
Drain Current (DC) (T = 25°C)  
I
±30  
Drain Current (pulse) Note1  
D(pulse)  
I
±60  
C
T1  
Total Power Dissipation (T = 25°C)  
P
56  
W
W
(TO-262)  
A
T2  
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
°C  
°C  
A
stg  
Storage Temperature  
T
–55 to +150  
26  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
68  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
(TO-263, TO-220SMD)  
ch  
DD  
G
GS  
2. Starting T = 25°C, V = 50 V, R = 25 Ω, V = 20 0 V  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
2.23  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
2002  
Document No.  
Date Published January 2002 NS CP(K)  
Printed in Japan  
D15063EJ1V0DS00 (1st edition)  
©

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