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2SK3476

更新时间： 2024-09-25 14:54:27

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2SK3476 数据手册

UNISONIC TECHNOLOGIES CO., LTD

2SK3476

Preliminary

POWER MOSFET

FIELD EFFECT TRANSISTOR

SILICON N CHANNEL MOSFET

TYPE, VHF/UHF BAND

AMPLIFIER APPLICATIONS



DESCRIPTION

The UTC 2SK3476 are intended for high frequency Power

Amplifier of telecommunications equipment.



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-223

Packing

Lead Free

Halogen-Free

2SK3476G-AA3-R

S: Source D: Drain

2SK3476L-AA3-R

Tape Reel

Note: Pin Assignment: G: Gate



MARKING

www.unisonic.com.tw

1 of 3

QW-R211-038.a

12 3

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型号	品牌	获取价格	描述	数据表
2SK3476(TE12L,Q)	TOSHIBA	获取价格	Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R
2SK3476_07	TOSHIBA	获取价格	Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
2SK3476L-AA3-R	UTC	获取价格	RF Power Field-Effect Transistor,
2SK3479	KEXIN	获取价格	MOS Field Effect Transistor
2SK3479	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3479	TYSEMI	获取价格	Super low on-state resistance: RDS(on)1 = 11 m MAX. Built-in gate protection diode
2SK3479-AZ	NEC	获取价格	Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me
2SK3479-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3479-S-AZ	NEC	获取价格	暂无描述
2SK3479-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET