是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 2.25 |
Is Samacsys: | N | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3476_07 | TOSHIBA |
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Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications | |
2SK3476L-AA3-R | UTC |
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RF Power Field-Effect Transistor, | |
2SK3479 | KEXIN |
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MOS Field Effect Transistor | |
2SK3479 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3479 | TYSEMI |
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Super low on-state resistance: RDS(on)1 = 11 m MAX. Built-in gate protection diode | |
2SK3479-AZ | NEC |
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Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3479-S | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3479-S-AZ | NEC |
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暂无描述 | |
2SK3479-Z | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3479-Z-AZ | NEC |
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Power Field-Effect Transistor, 83A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Me |