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2SK3476(TE12L,Q) PDF预览

2SK3476(TE12L,Q)

更新时间: 2024-09-24 14:47:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 171K
描述
Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R

2SK3476(TE12L,Q) 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknown风险等级:2.25
Is Samacsys:NBase Number Matches:1

2SK3476(TE12L,Q) 数据手册

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2SK3476  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK3476  
VHF- and UHF-band Amplifier Applications  
Unit: mm  
(Note)The TOSHIBA products listed in this document are intended for high  
frequency Power Amplifier of telecommunications equipment.These  
TOSHIBA products are neither intended nor warranted for any other  
use.Do not use these TOSHIBA products listed in this document except for  
high frequency Power Amplifier of telecommunications equipment.  
Output power: P = 7.0 W (min)  
O
Gain: G = 11.4dB (min)  
P
Drain efficiency: η = 60% (min)  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
V
V
DSS  
Gain-source voltage  
Drain current  
10  
GSS  
I
3
20  
A
D
Power dissipation  
P
(Note 1)  
W
°C  
°C  
D
JEDEC  
JEITA  
Channel temperature  
Storage temperature range  
T
ch  
150  
T
stg  
45 to 150  
TOSHIBA  
2-5N1A  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
Weight: 0.08 g (typ.)  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)  
Marking  
2
Type name  
UC  
F
1
3
**  
Dot  
Lo No.  
1. Gate  
2. Source (heat sink)  
3. Drain  
Caution  
Please take care to avoid generating static electricity when handling this transistor.  
Start of commercial production  
2000-08  
1
2014-03-01  

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