Datasheet > 2SK3475_07

2SK3475_07

更新时间： 2024-09-24 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	158K
描述
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

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数据手册

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2SK3475_07 数据手册

2SK3475

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3475

VHF- and UHF-band Amplifier Applications

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These

TOSHIBA products are neither intended nor warranted for any other

use.Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

•

Output power: P = 630 mW (min)

Gain: G = 14.9dB (min)

Drain efficiency: η = 45% (min)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gain-source voltage

Drain current

DSS

GSS

Power dissipation

(Note 1)

°C

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

SC-62

2-5K1D

−45~150

stg

TOSHIBA

Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2007-2-19

12 3 4

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