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2SK3472 PDF预览

2SK3472

更新时间: 2024-09-23 22:00:03
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
6页 317K
描述
Switching Regulator Applications

2SK3472 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-64包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
雪崩能效等级(Eas):122 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:4.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3472 数据手册

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2SK3472  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3472  
Switching Regulator Applications  
Unit: mm  
Low drain-source ON resistance: R  
= 4.0 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 0.8 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 450 V)  
DSS  
DS  
Enhancement-model: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Maximum Ratings (Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
450  
450  
±30  
1
V
V
DSS  
Drain-gate voltage (R  
= 20 k)  
V
GS  
DGR  
Gate-source voltage  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
2
A
DP  
Drain power dissipation  
P
20  
W
D
AS  
AR  
Single pulse avalanche energy  
E
122  
mJ  
(Note 2)  
JEDEC  
JEITA  
Avalanche current  
I
1
2
A
SC-64  
2-7B1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
TOSHIBA  
T
150  
ch  
Weight: 0.36 g (typ.)  
Storage temperature range  
T
55 to150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V = 90 V, T = 25°C (initial), L = 203 mH, R = 25 , I = 1 A  
DD ch AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic sensitive device. Please handle with caution.  
1
2002-03-04  

2SK3472 替代型号

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