Datasheet > 2SK3434

2SK3434

更新时间： 2024-11-18 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	45K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3434 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3434

TO-263

Unit: mm

+0.2

4.57

-0.2

Features

+0.1

1.27

-0.1

Super low on-state resistance:

R^DS(on)1= 20m MAX. (VGS = 10 V, ID = 24A)

R^DS(on)2= 31 m MAX. (VGS = 4 V, ID = 24A)

Low Ciss: Ciss =2100 pF TYP.

+0.1

-0.1

0.1max

1.27

Built-in gate protection diode

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

192

Power dissipation

T^C=25

T^A=25

P^D

1.5

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Yfs

Testconditons

VDS=60V,VGS=0

Min

Typ

Max

Unit

VGS= 20V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=20A

VGS=10V,ID=24A

VGS=4V,ID=24A

1.5

2.0

2.5

Forward transfer admittance

R^DS(on)1

RDS(on)2

Ciss

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

2100

340

170

V^DS=10V,VGS=0,f=1MHZ

C^oss

C^rss

t^on

t^r

400

120

160

I^D=24A,VGS(on)=10V,RG=10 ,VDD=30V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=48A, VDD =48V, VGS = 10 V

Q^GS

Q^GD

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