Datasheet > 2SK3147(L)-2

2SK3147(L)-2

更新时间： 2024-11-27 14:33:31

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
12页	61K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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2SK3147(L)-2 数据手册

2SK3147(L), 2SK3147(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-731 (Z)

1st. Edition

Feb. 1999

Features

•

Low on-resistance

R_DS=0.1 Ω typ.

•

High speed switching

4V gate drive device can be driven from 5V source

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
2SK3147(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 5A I(D) \| TO-252AA
2SK3147(S)-1	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR
2SK3147(S)-2	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3147(S)-3	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3147(S)-3	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,5A I(D),TO-252VAR
2SK3147L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147S	KEXIN	获取价格	Silicon N Cannel MOSFET
2SK3147S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3147S	TYSEMI	获取价格	Low on-resistance RDS = 0.1 typ. 4 V gate drive device can be driven from 5 V source