Datasheet > 2SK3050

2SK3050

更新时间： 2024-09-29 12:31:39

品牌	Logo	应用领域
TYSEMI		栅极驱动
页数	文件大小	规格书
1页	191K
描述
Low on-resistance. Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits.

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2SK3050 数据手册

SMMDD TTyyppee

TransistIoCrs

Product specification

2SK3050

TO-252

Unit: mm

+0.15

-0.15

Features

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-resistance.

Fast switching speed.

Wide SOA (safe operating area).

0.127

max

+0.1

0.80

-0.1

Gate-source voltage (V^GSS) guaranteed to be 30V.

Easily designed drive circuits.

+0.1

0.60

-0.1

1. Gate

Easy to use in parallel.

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Silicon N-channel MOSFET

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

V^GSS

I^D

Rating

600

Unit

Gate to Source Voltage

Drain Current(DC)

Drain Current (pulse) *

I^DP

Body to drain diode reverse drain current

Body to drain diode reverse drain current(pulse) *

I^DR

I^DRP

P^D

150

Total power dissipation (Tc=25

Channel Temperature

)

Tch

T^stg

Storage temperature

-55 to +150

* PW 10ìs,Dduty cycle 1%.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^GSS

V^(BR)DSSI^D=1mA, V^GS=0V

I^DSSV^DS=600V, V^GS=0V

Testconditons

Min

600

2.0

0.5

Typ

Max

100

Unit

Gate to source leak current

Drain to source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static Drain to source on stateresistance

Forward transfer admittance

Input capacitance

V^GS= 30V, V^DS=0V

100

4.0

5.5

V^GSthV^DS=10V, I^D=1mA

RDS(on) ID=1A, VGS=10V

4.4

1.0

280

|yfs|

C^iss

C^oss

C^rss

t^d(on)

t^r

I^D=1A, V^DS=10V

V^DS=10V

Output capacitance

V^GS=0V

Reverse transfer capacitance

Turn-on delay time

f=1MHz

V^GS=10V

Rise time

R^L=300

Turn-off delay time

t^d(off)

t^f

R^G=10

Fall time

I^D=1A, V^DD=300V

I^DR=2A, V^GS=0V

105

460

2.0

Reverse recovery time

Reverse recovery charge

t^rr

Q^rr

di/dt=100A/

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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