生命周期: | Obsolete | 零件包装代码: | TO-3PF |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.012 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 280 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2906-01 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2907 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2907-01 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2907-01R | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOS-FET | |
2SK2908-01 | ETC |
获取价格 |
||
2SK2908-01L | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2908-01S | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2909 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
2SK291 | HITACHI |
获取价格 |
Silicon N-Channel Junction FET | |
2SK2910 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 800MA I(D) | SOT-23VAR |