Datasheet > 2SK2903

2SK2903

更新时间： 2024-01-12 00:21:41

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	120K
描述
N-CHANNEL SILICON POWER MOS-FET

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中文翻译

获取价格

数据手册

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2SK2903 数据手册

FUJI POWER MOS-FET

2SK2903-01MR

N-CHANNEL SILICON POWER MOS-FET

TO-220F15

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

2.54

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

3. Source

Equivalent circuit schematic

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

VDS

Rating

Unit

Drain(D)

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source voltage

Maximum Avalanche Energy

Max. power dissipation

Operating and storage

temperature range

±50

ID(puls]

VGS

EAV*1

±200

±30

Gate(G)

720.8

Source(S)

°C

Tch

+150

Tstg

-55 to +150

*1 L=0.384mH, Vcc=24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Item

Test Conditions

Symbol

BVDSS

VGS(th)

Drain-source breakdown voltaget

Gate threshold voltage

ID=1mA

VGS=0V

2.5

ID=10mA

VDS=60V

VGS=0V

VDS=VGS

3.0

0.2

9.5

3.5

500

1.0

100

µA

Tch=25°C

Zero gate voltage drain current

IDSS

Tch=125°C

VGS=±30V

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

VDS=0V

IGSS

RDS(on)

gfs

ID=40A VGS=10V

ID=40A VDS=25V

VDS=25V

mΩ

3100

1300

350

4650

1950

530

Ciss

Output capacitance

VGS=0V

Coss

Crss

td(on)

Reverse transfer capacitance

Turn-on time ton

f=1MHz

VCC=30V ID=80A

VGS=10V

120

130

120

Turn-off time toff

td(off)

RGS=10 Ω

Avalanche capability

IAV

L=100 H Tch=25°C

1.0

0.13

1.5

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

Qrr

IF=50A VGS=0V Tch=25°C

IF=50A VGS=0V

-di/dt=100A/µs

Tch=25°C

µC

Thermalcharacteristics

Item

Min.

Typ.

Max. Units

Symbol

Test Conditions

Rth(ch-c)

channel to case

2.5

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

62.5

°C/W

12 3 4

中文翻译

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