是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.28 | Is Samacsys: | N |
雪崩能效等级(Eas): | 490 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.0097 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 280 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2826-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2826-S | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2826-S | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN | |
2SK2826-S-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2826-Z | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SMD, 3 PIN | |
2SK2826-Z-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me | |
2SK2826-Z-E1-AZ | RENESAS |
获取价格 |
2SK2826-Z-E1-AZ | |
2SK2826-ZJ | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK2826-ZJ | RENESAS |
获取价格 |
70A, 60V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | |
2SK2826-ZJ-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Me |