Datasheet > 2SK2809-01MR_05

2SK2809-01MR_05

更新时间： 2024-02-27 01:33:58

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	335K
描述
N-CHANNEL SILICON POWER MOSFET

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数据手册

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2SK2809-01MR_05 数据手册

2SK2809-01MR

FUJI POWER MOSFET

200509

N-CHANNEL SILICON POWER MOSFET

FAP-IIIB SERIES

Features

Outline Drawings

TO-220F

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Drain-source voltage

Symbol

VDS

Rating

Unit

Remarks

Drain(D)

Continuous drain current

Pulsed drain current

±50

±200

±20

453

ID[puls]

VGS

EAV

Gate(G)

Gate-source peak voltage

Maximum avalanche energy

Maximum power dissipation

Operating and storage

temperature range

°C

Tch

+150

-55 to +150

Source(S)

Tstg

*1 L=0.241mH, Vcc=24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Item

Symbol

V(BR)DSS

VGS(th)

IDSS

ID=1mA

VDS=60V

VGS=0V

VDS=VGS

VGS=0V

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

1.0

1.5

0.2

2.0

500

1.0

100

Tch=25°C

µA

Tch=125°C

20V

VGS=

VDS=0V

Gate-source leakage current

IGSS

ID=40A VGS=10V

VGS=4V

mΩ

Drain-source on-state resistance

RDS(on)

7.5

VGS=10V

3500

1250

360

ID=40A

VDS=25V

Forward transconductance

Input capacitance

gfs

5250

1870

540

Ciss

Coss

Crss

td(on)

VDS=25V

VGS=0V

f=1MHz

VCC=30V RG=10 Ω

ID=75A

Output capacitance

Reverse transfer capacitance

Turn-on time

120

285

165

VGS=10V

190

110

Turn-off time

td(off)

L=100µH

Tch=25°C

Avalanche capability

IAV

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

IF=160A VGS=0V Tch=25°C

IF=80A

1.15

0.17

1.65

120

VSD

trr

µC

-di/dt=100A/µs Tch=25°C

Qrr

Thermal characteristics

Item

Symbol

Rth(ch-c)

Rth(ch-a)

Min.

Typ.

Max. Units

2.50

°C/W

Thermal resistance

62.5

°C/W

www.fujielectric.co.jp/fdt/scd

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