Datasheet > 2SK2503

2SK2503

更新时间： 2024-11-18 12:31:39

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
1页	118K
描述
Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.

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中文翻译

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数据手册

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2SK2503 数据手册

SMD Type

MOSFICET

Product specification

2SK2503

Features

TO-252

Low on-resistance.

Unit: mm

Fast switching speed.

Wide SOA (safe operating area).

Easily designed drive circuits.

Easy to parallel.

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

P^D

Power dissipation

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^D=1mA,V^GS=0V

Min

Typ

Max

Unit

Drain source breakdown voltage

Drain cut-off current

V^DSS

I^DSS

I^GSS

V^DS=60V,V^GS=0

Gate leakage current

V^GS= 20V,V^DS=0

100

2.5

Gate threshold voltage

Forward transfer admittance

V^GS(th)V^DS=10V,I^D=1mA

1.0

4.0

V^DS=10V,I^D=2.5A

V^GS=10V,I^D=2.5A

V^GS=4V,I^D=2.5A

Y^fs

0.11 0135

Drain to source on-state resistance

R^DS(on)

0.17 0.20

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

t^r

520

240

100

V^DS=10V,V^GS=0,f=1MHZ

I^D=2.5A,V^GS(on)=10V,R^G=10 ,RL=12

,V^DD=30V

Turn-off delay time

Fall time

t^off

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