Datasheet > 2SK2158A-T1B

2SK2158A-T1B

更新时间： 2024-11-30 14:39:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	126K
描述
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346

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中文翻译

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2SK2158A-T1B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.86	配置：	Single
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK2158A-T1B 数据手册

DATA SHEET

^{MOS FIELD EF}2^FES^CTK^TR2^A1^NS5^IS8^TOA^R

N-CHANNEL MOSFET

FOR HIGH-SPEED SWITCHING

The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can

be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in low-

voltage portable systems such as headphone stereo sets and camcorders.

FEATURES

• Capable of drive gate with 1.5 V

PACKAGE DRAWING (Unit: mm)

• Because of high input impedance, there is no need to consider

driving current.

• Bias resistance can be omitted, enabling reduction in total

number of parts.

ORDERING INFORMATION

PART NUMBER

2SK2158A-T1B-AT

2SK2158A-T2B-AT

PACKAGE

SC-59 (Mini Mold)

Marking: G23

Remark “-AT” indicates Pb-free (This product does not contain

Pb in external electrode and other parts.). “-T1B”, “-

T2B” indicates the unit orientation (8 mm embossed

carrier tape, 3,000 pcs/reel).

1: Source

2: Gate

3: Drain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

±7.0

±0.1

±0.2

200

Drain

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

Body

Diode

Gate

°C

T^ch

150

−55 to +150

Gate

Storage Temperature

T^stg

Protection

Diode

Source

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17878EJ1V0DS00 (1st edition)

Date Published February 2006 NS CP(K)

Printed in Japan

1996

12 3 4 5

中文翻译

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与2SK2158A-T1B相关器件

型号	品牌	获取价格	描述	数据表
2SK2158A-T1B-AT	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK2158A-T2B	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
2SK2158A-T2B-AT	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
2SK2159	TYSEMI	获取价格	Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A
2SK2159	KEXIN	获取价格	MOS Field Effect Transistor
2SK2159	NEC	获取价格	N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SK2159-AZ	NEC	获取价格	Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-
2SK215-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK216	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK216	RENESAS	获取价格	Silicon N Channel MOS FET

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