Datasheet > 2SK2145_07

2SK2145_07

更新时间： 2024-01-30 19:48:14

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	588K
描述
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

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中文翻译

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数据手册

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2SK2145_07 数据手册

2SK2145

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK2145

Audio Frequency Low Noise Amplifier Applications

Unit: mm

•

Including two devices in SM5 (super mini type with 5 leads.)

High |Y |: |Y | = 15 mS (typ.) at V

= 10 V, V

= 0

High breakdown voltage: V

= −50 V

GDS

Low noise: NF = 1.0dB (typ.)

at V

= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ

•

High input impedance: I

= −1 nA (max) at V

= −30 V

GSS

Marking

Pin Assignment (top view)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

JEDEC

JEITA

―

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

TOSHIBA

2-3L1C

−50

GDS

Weight: 0.016 g (typ.)

Gate current

Drain power dissipation

300

(Note 1)

Junction temperature

Storage temperature

125

°C

stg

−55~125

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5

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