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2SK2145-BL(TE85L,F PDF预览

2SK2145-BL(TE85L,F

更新时间: 2024-02-04 09:45:40
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 302K
描述
JFET N-CH 50V SMV

2SK2145-BL(TE85L,F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.74Base Number Matches:1

2SK2145-BL(TE85L,F 数据手册

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2SK2145  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK2145  
Audio Frequency Low Noise Amplifier Applications  
Unit: mm  
Including two devices in SM5 (super mini type with 5 leads.)  
High |Y |: |Y | = 15 mS (typ.) at V  
= 10 V, V  
= 0  
fs  
fs  
DS  
GS  
High breakdown voltage: V  
= 50 V  
GDS  
Low noise: NF = 1.0dB (typ.)  
at V  
= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ  
DS  
D
g
High input impedance: I  
= 1 nA (max) at V  
= 30 V  
GSS  
GS  
Marking  
Pin Assignment (top view)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
JEDEC  
JEITA  
TOSHIBA  
2-3L1C  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
Weight: 0.016 g (typ.)  
V
50  
V
GDS  
Gate current  
I
10  
mA  
G
P
D
Drain power dissipation  
300  
mW  
(Note 1)  
Junction temperature  
Storage temperature  
T
125  
°C  
°C  
j
T
stg  
55 to 125  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
1993-03  
1
2014-03-01  

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