Datasheet > 2SK2094-Z

2SK2094-Z

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1089K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SK2094-Z 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2SK2094-Z

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● VDS (V) = 60V

● ID = 2A

0.127

max

● RDS(ON) ＜ 0.35Ω (VGS = 10V)

● RDS(ON) ＜ 0.5Ω (VGS = 4V)

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Gate

2.3

4.60

+0.15

-0.15

2 Drain

3 Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

(Note.1)

℃

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Symbol

Test Conditions

Min

Typ

Max

Unit

DSS

=1 mA, V^GS=0V

DS=60V, VGS=0V

DS=0V, VGS=±20V

DSS

GSS

100

±100

2.5

GS(th)

DS=10V I

GS=10V, I

^GS=4V, I =1A

^DS=10V, I =1A

D=1mA

D=1A

0.35

0.5

Static Drain-Source On-Resistance

RDS(O

Forward Transconductance

Input Capacitance

iss

oss

rss

d(on)

400

150

GS=0V, VDS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

Turn-On Rise Time

GS=10V, VDS=30V, I

=30Ω,R =10Ω

D=1A,

Turn-Off DelayTime

d(off)

100

Turn-Off Fall Time

Body Diode Reverse Recovery Time

100

IF= 2A,VGS=0, dI/dt= 100A/μs

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