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2SK209-Y(T5LMATUDF

更新时间： 2024-11-20 06:22:27
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 282K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236

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2SK209-Y(T5LMATUDF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.62
其他特性：LOW NOISE配置：SINGLE
FET 技术：JUNCTIONJEDEC-95代码：TO-236
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK209-Y(T5LMATUDF 数据手册

 浏览型号2SK209-Y(T5LMATUDF的Datasheet PDF文件第2页浏览型号2SK209-Y(T5LMATUDF的Datasheet PDF文件第3页浏览型号2SK209-Y(T5LMATUDF的Datasheet PDF文件第4页 
2SK209  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK209  
Audio Frequency Low Noise Amplifier Applications  
Unit: mm  
•
•
•
High |Y |: |Y | = 15 mS (typ.) at V  
= 10 V, V  
= 0  
fs  
fs  
DS  
GS  
High breakdown voltage: V  
= −50 V  
GDS  
Low noise: NF = 1.0dB (typ.)  
at V  
= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ  
DS  
D
G
•
•
High input impedance: I  
Small package  
= −1 nA (max) at V  
= −30 V  
GSS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−50  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
150  
D
T
j
125  
T
stg  
−55 to 125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236  
SC-59  
TOSHIBA  
2-3F1B  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
= −30 V, V = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
⎯
⎯
⎯
−1.0  
nA  
V
GSS  
GS  
DS  
DS  
= 0, I = −100 μA  
Gate-drain breakdown voltage  
V
−50  
⎯
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= 10 V, V  
= 0  
1.2  
⎯
14.0  
mA  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
V
= 10 V, I = 0.1 μA  
−0.2  
4.0  
⎯
⎯
15  
13  
3
−1.5  
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
DS  
DS  
DG  
DS  
D
= 10 V, V  
= 10 V, V  
= 0, f = 1 kHz  
= 0, f = 1 MHz  
mS  
pF  
pF  
fs  
GS  
GS  
C
⎯
iss  
rss  
Reverse transfer capacitance  
C
= 10 V, I = 0, f = 1 MHz  
⎯
⎯
D
= 10 V, R = 1 kΩ  
G
Noise figure  
Noise figure  
NF (1)  
NF (2)  
⎯
⎯
5
1
⎯
⎯
dB  
dB  
I
= 0.5 mA, f = 10 Hz  
D
V
= 10 V, R = 1 kΩ  
G
DS  
I
= 0.5 mA, f = 1 kHz  
D
Note: I  
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA  
DSS  
Marking  
Start of commercial production  
1981-06  
1
2014-03-01  
1234

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