生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2082-01 | FUJI |
获取价格 |
N-channel MOS-FET | |
2SK2083 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2084 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK2084 | RENESAS |
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Silicon N Channel MOS FET | |
2SK2084(L) | HITACHI |
获取价格 |
暂无描述 | |
2SK2084(L)-(2) | HITACHI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,7A I(D),TO-251VAR | |
2SK2084(L)|2SK2084(S) | ETC |
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||
2SK2084(S) | RENESAS |
获取价格 |
0.075 ohm, POWER, FET, DPAK-3 | |
2SK2084(S) | HITACHI |
获取价格 |
0.075ohm, POWER, FET, DPAK-3 | |
2SK2084(S)-(1) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |