生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 27 A | 最大漏源导通电阻: | 0.085 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 100 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1928TE24R | TOSHIBA |
获取价格 |
TRANSISTOR 27 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1929 | TOSHIBA |
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TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1929(2-10S1B) | TOSHIBA |
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TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, 3 PIN, FET General | |
2SK1929(2-10S2B) | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET General | |
2SK1929TE24L | TOSHIBA |
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TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1929TE24R | TOSHIBA |
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TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK192A | TOSHIBA |
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N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) | |
2SK192ABL | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SPAK | |
2SK192A-BL | TOSHIBA |
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暂无描述 | |
2SK192AGR | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |