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2SK1838S PDF预览

2SK1838S

更新时间: 2024-02-26 04:10:52
品牌 Logo 应用领域
TYSEMI 开关驱动
页数 文件大小 规格书
1页 157K
描述
Low on-resistance High speed switching Low drive current No secondary breakdown

2SK1838S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-63包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):10 W最大脉冲漏极电流 (IDM):2 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK1838S 数据手册

  
TransistIoCrs  
Product specification  
2SK1838S  
TO-252  
Unit: mm  
Features  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Low on-resistance  
High speed switching  
Low drive current  
0.127  
max  
No secondary breakdown  
+0.1  
0.80  
-0.1  
Suitable for switchingregulator, DC-DC converter  
+0.1  
0.60  
-0.1  
2.3  
4.60  
1 Gate  
+0.15  
-0.15  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
250  
V
30  
1
10  
A
Power dissipation  
PD  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10ms, duty cycle  
5%  
Electrical Characteristics Ta = 25  
Parameter  
Drain source breakdown voltage  
Gate to source breadown voltage  
Drain cut-off current  
Symbol  
Testconditons  
ID=10mA,VGS=0  
ID= 100 A,VDS=0  
Min  
250  
30  
Typ  
Max  
100  
Unit  
V
VDSS  
VGSS  
IDSS  
IGSS  
Yfs  
V
VDS=200V,VGS=0  
VGS= 25V,VDS=0  
VDS=10V,ID=0.5A  
A
Gate leakage current  
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
10  
A
0.3  
0.5  
5.5  
60  
30  
5
S
RDS(on) VGS=10V,ID=0.5A  
Ciss  
8.0  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Coss  
Crss  
td(on)  
tr  
Reverse transfer capacitance  
Turn-on delay time  
5
Rise time  
6
ID=0.5A,VGS(on)=10V,RL=60  
Turn-off delay time  
td(off)  
tf  
10  
4.5  
Fall time  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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