Datasheet > 2SK1630

2SK1630

更新时间： 2024-09-25 01:16:03

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	64K
描述
Drain Current âID= 3A@ TC=25C

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK1630 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

2SK1630

DESCRIPTION

·Drain Current –I_D= 3A@ T_C=25℃

·Drain Source Voltage-

: V_DSS=700V(Min)

APPLICATIONS

·Designed for high voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

VALUE

700

UNIT

ARAMETER

Drain-Source Voltage (V_GS=0)

Gate-Source Voltage

±30

Drain Current-continuous@ TC=25℃

Total Dissipation@TC=25℃

Max. Operating Junction Temperature

Storage Temperature Range

P_tot

T_j

150

℃

T_stg

-55~150

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

PDF pdfFactory Pro

www.fineprint.cn

中文翻译

下载PDF

与2SK1630相关器件

型号	品牌	获取价格	描述	数据表
2SK1632	ISC	获取价格	Drain Current âID= 5A@ TC=25C
2SK1635	PANASONIC	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
2SK1636	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1636	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1636(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 15A I(D) \| TO-262AA
2SK1636(L)\|2SK1636(S)	ETC	获取价格
2SK1636(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.27ohm, N-Channel, Metal-oxide Semiconductor FET, LDPAK-3
2SK1636(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK1636(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK1636(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 15A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Met