Datasheet > 2SK1608

2SK1608

更新时间： 2024-09-23 23:20:35

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页数	文件大小	规格书
2页	40K
描述

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中文翻译

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数据手册

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2SK1608 数据手册

Power F-MOS FETs

2SK1608

Silicon N-Channel Power F-MOS FET

■ Features

● High avalanche energy capacity

● V_GSS: 30V guaranteed

unit: mm

● Low R_DS(on), high-speed switching characteristic

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

■ Applications

● High-speed switching (switching power supply)

● For high-frequency power amplification

φ3.1±0.1

■ Absolute Maximum Ratings (T_C= 25°C)

Parameter

Symbol

Ratings

Unit

1.3±0.2

Drain to Source breakdown voltage V_DSS

500

1.4±0.1

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

+0.2

–0.1

0.5

0.8±0.1

±5

Drain current

I_DP

±10

2.54±0.25

EAS^*

100

5.08±0.5

1: Gate

2: Drain

3: Source

EIAJ: SC-67

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

Single pulse

T_ch

150

°C

TO-220 Full Pack Package (a)

T_stg

−55 to +150

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

V_DS= 400V, V_GS= 0

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

min

typ

max

0.1

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_GSS

±1

Drain to Source breakdown voltage V_DSS

500

100

Avalanche energy capacity

Gate threshold voltage

EAS^*

V_th

L = 8mH, I_D= 5A, V_DD= 50V

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 3A

Drain to Source ON-resistance

Forward transfer admittance

R_DS(on)

| Y_fs|

1.35

3.5

700

100

1.7

Ω

V_DS= 25V, I_D= 3A

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time

t_on

V_GS= 10V, I_D= 3A

Fall time

t_f

V_DD= 150V, R_L= 50Ω

Turn-off time (delay time)

t_d(off)

Avalanche energy capacity test circuit

I_D

Gate

V_DS

V_DD

Drain

Source

PVS

R_GS

中文翻译

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