生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.29 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1335L | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1335S | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1336 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1336 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1336-E | RENESAS |
获取价格 |
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN | |
2SK1336RF | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.3A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1336RF | RENESAS |
获取价格 |
0.3A, 60V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 | |
2SK1336RR | RENESAS |
获取价格 |
0.3A, 60V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 | |
2SK1336RR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.3A I(D), 60V, 2.5ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1336TL | ETC |
获取价格 |
TRANSISTOR MOSFET TO 92 E LINE TO 237 |