是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3P | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.025 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1298 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1298 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1298-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1299 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1299(L) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1299(L) | RENESAS |
获取价格 |
3A, 100V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
2SK1299(L)-(1) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK1299(L)|2SK1299(S) | ETC |
获取价格 |
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2SK1299(S) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK1299(S)-(1) | HITACHI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |