生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.06 | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 0.03 A |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1215IGDTL | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDTR | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDUL | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGDUR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-3 | |
2SK1215IGE | HITACHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGE | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK1215IGETL | RENESAS |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1215IGETL-E | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SC-70, CMPAK-3 | |
2SK1215IGETR | RENESAS |
获取价格 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-3 | |
2SK1215IGEUL | RENESAS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |