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2SK1179 PDF预览

2SK1179

更新时间: 2024-11-25 22:45:07
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
1页 37K
描述
MOSFET

2SK1179 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.83Is Samacsys:N
其他特性:UL APPROVED雪崩能效等级(Eas):400 mJ
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:500 V最大漏极电流 (ID):8.5 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):34 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

2SK1179 数据手册

  
2SK1179  
External dimensions  
2 ...... FM100  
Absolute Maximum Ratings  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
500  
max  
VDSS  
VGSS  
ID  
500  
±20  
V
V
V(BR) DSS  
IGSS  
V
nA  
µA  
V
ID = 250µA, VGS = 0V  
VGS = ±20V  
±500  
250  
4.0  
±8.5  
A
IDSS  
VDS = 500V, VGS = 0V  
VDS = 10V, ID = 250µA  
VDS = 10V, ID = 4.5A  
VGS = 10V, ID = 4.5A  
ID (pulse)  
PD  
±34 (Tch 150ºC)  
85 (Tc = 25ºC)  
400  
A
VTH  
2.0  
5.1  
W
mJ  
ºC  
ºC  
Re (yfs)  
RDS (on)  
Ciss  
7.7  
0.70  
1300  
180  
60  
S
EAS  
0.85  
*
Tch  
150  
pF  
pF  
ns  
ns  
VDS = 25V, f = 1.0MHz,  
VGS = 0V  
Tstg  
55 to +150  
Coss  
ton  
ID = 4.5A, VDD = 250V,  
VGS = 10V,  
See Figure 2 on Page 5.  
: VDD = 50V, L = 10mH, IL = 8.5A, unclamped,  
See Figure 1 on Page 5.  
*
toff  
110  
VDS ID Characteristics  
VGS ID Characteristics  
ID RDS (ON) Characteristics  
10  
10  
8
1.5  
=
VDS 10V  
=
VGS 10V  
10V  
8
5.5V  
1.0  
0.5  
0
6
6
4
4
5V  
=
TC  
55ºC  
2
2
25ºC  
125ºC  
=
VGS 4.5V  
0
0
0
5
10  
15  
20  
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS (V)  
VGS (V)  
ID (A)  
I
D Re(yfs) Characteristics  
VGS VDS Characteristics  
TC RDS (ON) Characteristics  
20  
10  
10  
8
2.0  
1.5  
1.0  
=
VDS 10V  
=
ID 4.5A  
VGS 10V  
=
TC  
55ºC  
25ºC  
=
125ºC  
=
ID 8.5A  
5
6
4
=
ID 4.5A  
1
0.5  
0
2
0
0.5  
0.3  
0.05 0.1  
0.5  
1
5
10  
2
5
10  
20  
150  
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
VDS Capacitance Characteristics  
V
SD IDR Characteristics  
Safe Operating Area  
Ta PD Characteristics  
(Tc=25ºC)  
5000  
10  
50  
90  
=
VGS 0V  
ID (pulse) max  
ID max  
80  
70  
60  
50  
40  
30  
20  
10  
0
=
f
1MHz  
8
6
Ciss  
10  
5
1000  
500  
1
4
2
0
Coss  
Crss  
=
VGS 0V  
0.5  
100  
50  
5V,10V  
0.1  
Without heatsink  
20  
0.03  
0
10  
20  
30  
40  
50  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
VSD (V)  
0
50  
100  
Ta (ºC)  
150  
3
5
10  
50 100  
VDS (V)  
500 1000  
VDS (V)  
10  

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