Datasheet > 2SK0665(2SK665)

2SK0665(2SK665)

更新时间： 2024-11-27 23:20:35

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描述
2SK0665 (2SK665) - N-Channel MOS FET

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中文翻译

获取价格

数据手册

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2SK0665(2SK665) 数据手册

Silicon MOS FETs (Small Signal)

2SK0665 (2SK665)

Silicon N-Channel MOS FET

unit: mm

2.1±0.1

For switching

0.425

1.25±0.1

0.425

I Features

G High-speed switching

G Small drive current owing to high input inpedance

G High electrostatic breakdown voltage

I Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DS

V_GSO

I_D

Ratings

Unit

0.2±0.1

100

1: Gate

2: Source

3: Drain

EIAJ: SC-70

S-Mini Type Package (3-pin)

°C

Max drain current

I_DP

200

Allowable power dissipation

Channel temperature

Storage temperature

P_D

150

Marking Symbol: 3O

Internal Connection

T_ch

150

T_stg

−55 to +150

°C

R₁

R₂

I Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

V_DS= 10V, V_GS= 0

I_GSS

V_GS= 8V, V_DS= 0

Drain to Source breakdown voltage V_DSS

I_D= 100µA, V_GS= 0

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

High level output voltage

Low level output voltage

Input resistance

V_th

I_D= 100µA, V_DS= V_GS

I_D= 20mA, V_GS= 5V

1.5

3.5

R_DS(on)

| Y_fs|

V_OH

V_SL

Ω

I_D= 20mA, V_DS= 5V, f = 1kHz

V_DD= 5V, V_GS= 1V, R_L= 200Ω

V_DD= 5V, V_GS= 5V, R_L= 200Ω

4.5

200

R₁+ R₂

100

kΩ

µs

Turn-on time

t_on

V_DD= 5V, V_GS= 0 to 5V, R_L= 200Ω

V_DD= 5V, V_GS= 5 to 0V, R_L= 200Ω

Turn-off time

t_off

¹Resistance ratio R₁/R₂= 1/50

t_on, t_offmeasurement circuit ³Pulse measurement

V_out

200Ω

90%

10%

V_in

V_out

V_GS= 5V

50Ω

V_DD= 5V

10%

90%

t_on

t_off

Note) The part number in the parenthesis shows conventional part number.

291

12 3

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