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2SK0663(2SK663) PDF预览

2SK0663(2SK663)

更新时间: 2024-11-27 23:20:35
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其他 - ETC 信号器
页数 文件大小 规格书
3页 76K
描述
Small-signal device - Small-signal FETs - Junction FETs

2SK0663(2SK663) 数据手册

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Silicon Junction FETs (Small Signal)  
2SK0663 (2SK663)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
+0.10  
–0.05  
+0.1  
–0.0  
0.15  
0.3  
3
I Features  
G Low noise-figure (NF)  
G High gate to drain voltage VGDO  
G S-mini type package, allowing downsizing of the sets and auto-  
matic insertion through the tape/magazine packing.  
1
2
(0.65) (0.65)  
1.3±0.1  
2.0±0.2  
10°  
I Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDSX  
VGDO  
VGSO  
ID  
Ratings  
Unit  
V
55  
55  
V
1: Source  
2: Drain  
3: Gate  
55  
V
EIAJ: SC-70  
SMini3-G1 Package  
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Marking Symbol (Example): 2B  
Allowable power dissipation  
Junction temperature  
Storage temperature  
PD  
150  
Tj  
125  
Tstg  
55 to +125  
°C  
I Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
12  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
VGS = 30V, VDS = 0  
G = 100µA, VDS = 0  
1
IGSS  
VGDS  
VGSC  
gm  
10  
I
55  
80  
Gate to Source cut-off voltage  
Mutual conductance  
VDS = 10V, ID = 10µA  
5  
V
VDS = 10V, ID = 5mA, f = 1kHz  
2.5  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
2.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
IDSS (mA)  
1 to 3  
2BP  
2 to 6.5  
2BQ  
5 to 12  
2BR  
Marking Symbol  
Note) The part number in the parenthesis shows conventional part number.  
253  

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