2SK0657

更新时间： 2024-11-24 22:12:39

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	78K
描述
For Switching

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中文翻译

获取价格

数据手册

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2SK0657 数据手册

Silicon MOS FETs (Small Signal)

2SK0657 (2SK657)

Silicon N-Channel MOS FET

Unit: mm

For switching

2.5 0.1

6.9 0.1

(1.5)

(1.0)

(1.5)

I Features

G High-speed switching

G M type package, allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R 0.9

R 0.7

(0.85)

0.55 0.1

0.45 0.05

I Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol

Ratings

Unit

1: Source

2: Drain

3: Gate

(2.5) (2.5)

Drain to Source breakdown voltage V_DSS

Gate to Source voltage

Drain current

V_GSO

I_D

EIAJ: SC-71

M-A1 Package

±100

±200

400

°C

Max drain current

I_DP

P_D

Allowable power dissipation

Channel temperature

Storage temperature

Internal Connection

T_ch

T_stg

150

−55 to +150

°C

I Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

V_DS= 10V, V_GS= 0

I_GSS

V_GS= 8V, V_DS= 0

Drain to Source breakdown voltage V_DSS

I_D= 100µA, V_GS= 0

Gate threshold voltage

V_th

I_D= 100µA, V_DS= V_GS

I_D= 20mA, V_GS= 5V

I_D= 20mA, V_DS= 5V, f = 1kHz

1.5

3.5

Drain to Source ON-resistance

Forward transfer admittance

R_DS(on)

| Y_fs|

Ω

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

V_DS= 5V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

1.2

Turn-on time

Turn-off time

t_on

V_DD= 5V, V_GS= 0 to 5V, R_L= 200Ω

V_DD= 5V, V_GS= 5 to 0V, R_L= 200Ω

t_off

^*t_on, t_offmeasurement circuit

V_out

200Ω

90%

10%

V_in

V_GS= 5V

V_DD= 5V

V_out

10%

90%

50Ω

t_on

t_off

Note) The part number in the parenthesis shows conventional part number.

12 3

中文翻译

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