5秒后页面跳转
捷配首页

Datasheet > 2SJ610(2-7J1B)
2SJ610(2-7J1B) PDF预览

2SJ610(2-7J1B)

更新时间： 2024-11-06 14:50:35
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 176K
描述
TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power

阅读下载

中文翻译

获取价格

2SJ610(2-7J1B) 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Lifetime Buy零件包装代码：SC-64
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.3雪崩能效等级（Eas）：180 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (ID)：2 A
最大漏源导通电阻：2.55 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：4 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SJ610(2-7J1B) 数据手册

 浏览型号2SJ610(2-7J1B)的Datasheet PDF文件第2页浏览型号2SJ610(2-7J1B)的Datasheet PDF文件第3页浏览型号2SJ610(2-7J1B)的Datasheet PDF文件第4页浏览型号2SJ610(2-7J1B)的Datasheet PDF文件第5页浏览型号2SJ610(2-7J1B)的Datasheet PDF文件第6页 
2SJ610  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)  
2SJ610  
Switching Regulator, DC/DC Converter and  
Motor Drive Applications  
Unit: mm  
6.5 ± 0.2  
5.2 ± 0.2  
0.6 MAX.  
•
•
•
•
Low drain-source ON-resistance: R  
= 1.85 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 18 S (typ.)  
fs  
Low leakage current: I  
= −100 μA (V  
= −250 V)  
DSS  
DS  
Enhancement mode: V = −1.5 to −3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1 ± 0.2  
0.8 MAX.  
0.6 MAX.  
Absolute Maximum Ratings (Ta = 25°C)  
1.05 MAX.  
0.6 ± 0.15  
1
2
3
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
−250  
−250  
±20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
2
2.3 ± 0.15  
1. GATE  
2. DRAIN  
2.3 ± 0.15  
DC  
(Note 1)  
I
−2.0  
D
1
Drain current  
A
Pulse (t = 1 ms)  
（HEAT SINK）  
3. SOURSE  
I
−4.0  
20  
DP  
3
(Note 1)  
Drain power dissipation  
P
W
D
AS  
AR  
JEDEC  
―
―
Single-pulse avalanche energy  
E
180  
mJ  
(Note 2)  
JEITA  
Avalanche current  
I
−2.0  
2.0  
A
TOSHIBA  
2-7J1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V  
R
= −50 V, T = 25°C (initial), L = 75 mH, I  
= 25 Ω  
= −2.0 A,  
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-02-05  
123456

中文翻译

下载PDF

与2SJ610(2-7J1B)相关器件

型号 品牌 获取价格 描述 数据表
2SJ610_06 TOSHIBA

获取价格

 		Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applicatio
2SJ610_09 TOSHIBA

获取价格

 		TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
2SJ612 SANYO

获取价格

 		Ultrahigh-Speed Switching Applications
2SJ613 SANYO

获取价格

 		Ultrahigh-Speed Switching Applications
2SJ615 SANYO

获取价格

 		Ultrahigh-Speed Switching Applications
2SJ616 SANYO

获取价格

 		Ultrahigh-Speed Switching Applications
2SJ618 TOSHIBA

获取价格

 		High-Power Amplifier Applications
2SJ619 TOSHIBA

获取价格

 		TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
2SJ619(TE24L,Q) TOSHIBA

获取价格

 		MOSFET P-CH 100V 16A SC-97
2SJ619_06 TOSHIBA

获取价格

 		Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

与2SJ610(2-7J1B)相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证