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2SJ492-ZJ PDF预览

2SJ492-ZJ

更新时间: 2024-11-15 18:09:27
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 1625K
描述
P-Channel MOSFET

2SJ492-ZJ 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
2SJ492-ZJ  
Features  
VDS (V) =-60V  
ID =-20 A  
RDS(ON) 100m Ω (VGS =-10V)  
RDS(ON) 185mΩ (VGS =-4V)  
Low Ciss: Ciss = 1210 pF (TYP.)  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
Rating  
-60  
Unit  
V
Drain-Source Voltage  
VDS  
V
GS(AC)  
GS(DC)  
± 20  
-20,0  
-20  
Gate-Source Voltage  
(Note.1)  
V
Continuous Drain Current  
ID  
A
Pulsed Drain Current (Note.2)  
I
DM  
AS  
-80  
Single Avalanche Current (Note.3)  
I
-20  
70  
Tc = 25℃  
Ta = 25℃  
Power Dissipation  
P
D
W
mJ  
1.5  
Single Avalanche Energy  
(Note.3)  
E
AS  
40  
Thermal Resistance.Junction- to-Ambient  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
R
thJA  
thJC  
83.3  
1.79  
150  
/W  
R
T
J
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Note.1: f = 20 kHz, Duty Cycle 10% (+Side)  
Note.2: PW 10u s,Duty Cycle 1%  
Note.3: Starting TJ = 25 °C, RA = 25Ω , VGS = –20 V 0  
1
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