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2SJ3053DV PDF预览

2SJ3053DV

更新时间: 2024-11-18 18:09:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 368K
描述
P-Channel MOSFET

2SJ3053DV 数据手册

 浏览型号2SJ3053DV的Datasheet PDF文件第2页浏览型号2SJ3053DV的Datasheet PDF文件第3页浏览型号2SJ3053DV的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
P Channel MOSFET  
2SJ3053DV  
(
)
Unit: mm  
SOT-23-6  
+0.1  
-0.1  
0.4  
Features  
Surface Mount Package  
5
4
6
Super High Density Cell Design  
for Extremely Low RDS(on)  
Exceptional On-resistance and Maximum  
DC Current Capability  
2
3
1
+0.02  
-0.02  
0.15  
+0.01  
-0.01  
+0.2  
-0.1  
1 Drain 4 Source  
2 Drain 5 Drain  
3 Gate 6 Drain  
Absolute Maximum Ratings (T = 25°C, unless otherwise noted)  
a
Parameter  
Symbol  
Rating  
-150  
±20  
-1.4  
-5  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
GS  
V
Continuous Drain Current (Note 1)  
I
D
A
Pulsed Drain Current (tp=10us)  
I
DM  
Power Dissipation  
P
D
0.35  
357  
150  
W
Thermal Resistancefrom Junction- to-Ambient (Note 1)  
Junction Temperature  
RthJA  
/W  
T
J
Junction Storage Temperature Range  
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)  
T
stg  
-55 to 150  
260  
T
L
Note 1.Surface mounted on FR4 board using the minimum recommended pad size.  
1
www.kexin.com.cn  

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