Datasheet > 2SJ3001DS

2SJ3001DS

更新时间： 2024-10-15 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	122K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SJ3001DS 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

2SJ3001DS

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

+0.1

-0.1

0.4

Ƶ Features

ƽ VDS (V) =-20V

ƽ RDS(ON) ˘ 100m¡ (VGS =-4.5V)

ƽ RDS(ON) ˘ 150m¡ (VGS =-2.5V)

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Gate

2. Source

3. Drain

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

5 sec

Steady State

Unit

-20

VDS

Gate-Source Voltage

-2.4

-1.9

-2.2

-1.8

Continuous Drain Current

(T =150ć)

Ta=25ć

Ta=70ć

-10

Pulsed Drain Current *2

Power Dissipation *1

IDM

0.9

0.57

120

140

0.7

0.45

145

175

Ta=25ć

Ta=70ć

ć/W

Thermal Resistance.Junction- to-Ambient *1

RthJA

150

Junction Temperature

Storage Temperature Range

-55 to 150

Tstg

*1 Surface Mounted on FR4 Board, t İ 5 sec.

*2 Pulse width limited by maximum junction temperature.

*3 Surface Mounted on FR4 Board.

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