Datasheet > 2SJ3001

2SJ3001

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	762K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SJ3001 数据手册

SMD Type

MOSFET

Transistors

P-Channel MOSFET

2SJ3001

Unit:mm

SOT-223

6.50 0.2

3.00 0.1

Ƶ Features

-0.67 A, -200 V, RDS(on) = 2.7ȍ (Max.)

@ VGS = -10V, ID = -0.335 A

Low Gate Charge ( Typ. 6.0 nC)

Low Crss ( Typ. 7.5 pF)

0.250

2.30 (typ)

0.84 (max)

Gauge Plane

0.66 (min)

1.Gate

2.Drain

3.Source

4.Drain

4.60 (typ)

Ƶ Absolute Maximum Ratings

TC = 25ć unless otherwise noted.

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

-200

-0.67

-0.53

-2.7

=25ć

=70ć

Continuous Drain Current

Pulsed Drain Current

(Note1)

(Note2)

(Note1)

Single Pulsed Avalanche Energy

Avalanche Current

150

-0.67

0.25

-5.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

V/ns

2.5

=25ć

Power Dissipation

- Derate above 25°C

0.02

W/ć

ć/W

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

150

Storage Temperature Range

Tstg

-55 to 150

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

300

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 500mH, IAS = -0.67A, VDD = -50V, R

= 25 , Starting T

J = 25°C

3. ISD İ -2.8A, di/dt İ 300A/μs, VDD İ BVDSS, Starting T

= 25°C

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