Datasheet > 2SJ166

2SJ166

更新时间： 2024-01-18 15:14:53

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管输入元件
页数	文件大小	规格书
1页	44K
描述
MOS Fied Effect Transistor

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技术参数
数据手册

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2SJ166 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ166 数据手册

SMD Type

MOSFET

MOS Fied Effect Transistor

2SJ166

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Directly driven by Ics having a 5V poer supply.

Not necessary to consider dreving current because of its high

input impedance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

Possible to reduce the number of parts by omitting the bias resistor.

+0.1

1.9

-0.1

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage VGS=0

Gate to source voltage VDS=0

Drain current (DC)

Symbol

VDSS

VGSS

Rating

-50

Unit

7.0

100

Drain current(pulse) *

200

Total power dissipation

Channel temperature

200

Tch

150

Storage temperature

Tstg

-55 to +150

* PW

10 ms; d

50%.

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cut-off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

Testconditons

Min

Typ

Max

-10

Unit

IDSS

IGSS

VDS=-50V,VGS=0

VGS= 7.0V,VDS=0

VDS=-5.0V,ID=-1.0

1.0

VGS(off)

Yfs

-1.0

-2.1

-3.0

VDS=-5.0V,ID=-20mA

RDS(on) VGS=-4.0V,ID=-20mA

Ciss

VDS=-5.0V,VGS=0,f=1Mhz

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^oss

Crss

td(on)

VGS(on)=-5.0V,RG=10 ,VDD=-5.0V,ID=-

20mA RL=250

Turn-off delay time

Fall time

td(off)

Marking

H11

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