生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 配置: | SINGLE |
最大漏极电流 (ID): | 0.02 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ164 | PANASONIC |
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Silicon P-Channel Junction FET | |
2SJ164Q | PANASONIC |
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Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction | |
2SJ165 | NEC |
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P-CHANNEL MOS FET FOR SWITCHING | |
2SJ165-A | NEC |
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Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal | |
2SJ166 | NEC |
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P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SJ166 | KEXIN |
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MOS Fied Effect Transistor | |
2SJ166-A | RENESAS |
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100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN | |
2SJ166-L-AT | RENESAS |
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TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346 | |
2SJ166-T1B | NEC |
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Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal | |
2SJ166-T2B | NEC |
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暂无描述 |