是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最大漏极电流 (Abs) (ID): | 7 A |
最大漏极电流 (ID): | 7 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SJ161 | RENESAS |
功能相似 |
Silicon P Channel MOS FET | |
2SJ162 | HITACHI |
功能相似 |
Silicon P-Channel MOS FET | |
2SJ161 | HITACHI |
功能相似 |
Silicon P-Channel MOS FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ162 | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ162 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ162-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ163 | PANASONIC |
获取价格 |
Silicon P-Channel Junction FET | |
2SJ163O | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction | |
2SJ163P | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction | |
2SJ163Q | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction | |
2SJ163TSK | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction | |
2SJ164 | PANASONIC |
获取价格 |
Silicon P-Channel Junction FET | |
2SJ164Q | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction |