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2SJ161-E PDF预览

2SJ161-E

更新时间: 2024-11-09 06:25:07
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 71K
描述
Silicon P Channel MOS FET

2SJ161-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ161-E 数据手册

 浏览型号2SJ161-E的Datasheet PDF文件第2页浏览型号2SJ161-E的Datasheet PDF文件第3页浏览型号2SJ161-E的Datasheet PDF文件第4页浏览型号2SJ161-E的Datasheet PDF文件第5页浏览型号2SJ161-E的Datasheet PDF文件第6页 
2SJ160, 2SJ161, 2SJ162  
Silicon P Channel MOS FET  
REJ03G0847-0200  
(Previous: ADE-208-1182)  
Rev.2.00  
Sep 07, 2005  
Description  
Low frequency power amplifier  
Complementary pair with 2SK1056, 2SK1057 and 2SK1058  
Features  
Good frequency characteristic  
High speed switching  
Wide area of safe operation  
Enhancement-mode  
Good complementary characteristics  
Equipped with gate protection diodes  
Suitable for audio power amplifier  
Outline  
RENESAS Package code: PRSS0004ZE-A  
(Package name: TO-3P)  
D
1. Gate  
2. Source (Flange)  
3. Drain  
G
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 5  

2SJ161-E 替代型号

型号 品牌 替代类型 描述 数据表
2SJ161 RENESAS

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