Datasheet > 2SJ130S

2SJ130S

更新时间： 2024-11-20 06:23:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲
页数	文件大小	规格书
2页	46K
描述
Silicon P-Channel MOS FET

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中文翻译

获取价格

数据手册

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2SJ130S 数据手册

SMD Type

TransistIoCrs

Silicon P-Channel MOS FET

2SJ130S

TO-252

Features

Unit: mm

+0.15

6.50

-0.15

+0.1

2.30

-0.1

Low on-resistance

+0.2

5.30

-0.2

+0.8

0.50

-0.7

High speed switching

Low drive current

No secondary breakdown

0.127

max

+0.1

0.80

-0.1

Suitable for switching regulator, DC-DC converter and

ultrasonic power oscillators

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V^DSS

V^GSS

I^D(DS)

I^D(pulse)

I^DR

Rating

Unit

-300

-1

Drain peak current

-2

Body to drain diode reverse drain current

-1

Pch

Channel dissipation (Tc=25

Channel temperature

Storage temperature

)

Tch

150

Tstg

-55 to +150

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