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2SD999

更新时间: 2024-11-17 07:31:59
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
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描述
NPN Silicon Epitaxial Transistor

2SD999 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxial Transistor  
2SD999  
Features  
World standard miniature package:SOT-89.  
Low collector saturation voltage.  
Excellent dc current gain linearity.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
30  
25  
V
5
V
Collector current (DC)  
Collector Current (pulse) *  
Total power dissipation  
Junction temperature  
1
1.5  
A
IC  
A
PT  
2.0  
W
Tj  
150  
Storage temperature  
Tstg  
-55 to +150  
* Pulse Test PW  
10ms, Duty Cycle  
50%.  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
100  
100  
400  
Unit  
nA  
VCB = 30 V, IE = 0 A  
VEB = 5.0 V, IC = 0 A  
VCE = 1.0 V, IC = 100 mA  
VCE = 1.0 V, IC = 1.0A  
IEBO  
nA  
90  
50  
200  
140  
0.21  
1
DC current gain *  
hFE  
Collector saturation voltage *  
Base saturation voltage *  
Base-emitter voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = 1.0 A, IB = 0.1A  
VBE(sat) IC = 1.0 A, IB = 0.1A  
0.4  
1.2  
700  
V
V
VBE  
fT  
VCE = 6.0 V, IC = 10 mA  
VCE = 6.0 V, IE = -10 mA  
600  
630  
130  
22  
mV  
MHz  
pF  
Cob  
VCB = 6 V, IE = 0, f = 1.0 MHz  
* Pulsed: PW  
350 ìs, duty cycle  
2%  
hFE Classification  
Marking  
hFE  
CM  
90 180  
CL  
135 270  
CK  
200 400  
1
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