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2SD966 PDF预览

2SD966

更新时间: 2024-11-21 14:55:51
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2SD966 数据手册

 浏览型号2SD966的Datasheet PDF文件第2页 
2SD966  
NPN Silicon Epitaxial Planar Transistor  
for low-frequency power amplification and  
stroboscope.  
The transistor is subdivided into three groups P,  
Q and R, according to its DC current gain.  
On special request, these transistors can be  
manufactured in different pin configurations.  
1. Emitter 2. Collector 3. Base  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
40  
V
V
20  
7
V
5
A
Peak Collector Current  
ICP  
8
A
Collector Power Dissipation  
PC  
1
W
O
C
Junction Temperature  
Tj  
150  
O
C
Storage Temperature Range  
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 2 V, IC = 0.5 A  
Current Gain Group  
P
Q
R
hFE  
hFE  
hFE  
hFE  
120  
230  
340  
150  
-
-
-
-
250  
380  
600  
-
-
-
-
-
at VCE = 2 V, IC = 2 A  
Collector Base Cutoff Current  
at VCB = 10 V  
Emitter Base Cutoff Current  
at VEB = 7 V  
Collector Emitter Breakdown Voltage  
at IC = 1 mA  
Emitter Base Breakdown Voltage  
at IE = 10 µA  
Collector Emitter Saturation Voltage  
at IC = 3 A, IB = 0.1 A  
Transition Frequency  
at VCB = 6 V, IE = -50 mA, f = 200 MHz  
Collector Output Capacitance  
at VCB = 20 V, f = 1.0 MHz  
ICBO  
IEBO  
-
-
-
0.1  
0.1  
-
µA  
µA  
V
-
VCEO  
VEBO  
VCE(sat)  
fT  
20  
7
-
-
-
-
V
-
150  
-
1
V
-
-
MHz  
pF  
Cob  
-
50  
®
Dated : 22/02/2016 CL Rev: 01  

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