Datasheet > 2SD965QU

2SD965QU

更新时间： 2025-09-19 20:02:23

品牌	Logo	应用领域
GWSEMI		/
页数	文件大小	规格书
3页	503K
描述
Package : SOT-89; Polarity : NPN; Ic (mA) : 5000; VCEO (V) : 20; hFE = Min : 230; hFE = Max : 380; hFE = Ic (mA) : 500; hFE = VCE (V) : 2; VCE (sat) = Max Volts : 1; VCE (sat) = Ic (mA) : 3000; VCE (sat) = IB (mA) : 100; fT TYP (MHz) : 150;

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2SD965QU 数据手册

2SD965xU-SERIES

TRANSISTOR(NPN)

SOT-89

FEATURES

z Low Collector-Emitter Saturation Voltage

z Large Collector Power Dissipation and Current

z Mini Power Type Package

1. BASE

2. COLLECTOR

3. EMITTER

MARKING: D965

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

750

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

167

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100µA,I_E=0

I_C=1mA,I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA,I_C=0

V_CB=10V,I_E=0

V_EB=7V,I_C=0

0.1

µA

Emitter cut-off current

I_EBO

200

h_FE(1)

V_CE=2V, I_C=1mA

380

230

h_FE(2)

V_CE=2V, I_C=500mA

DC current gain

340

600

h_FE(3)

V_CE=2V, I_C=2A

I_C=3A,I_B=0.1A

150

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

VCE=6V,IC=50mA，f=200MHz

150

MHz

Collector output capacitance

C_ob

V_CB=20V, I_E=0, f=1MHz

12 3

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