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2SD965AU PDF预览

2SD965AU

更新时间: 2023-12-06 20:04:09
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 853K
描述
小信号晶体管

2SD965AU 数据手册

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2SD965AU  
NPN Silicon Epitaxial Planar Transistor  
Features  
• Audio amplifier  
• Flash unit of camera  
• Switching circuit  
Absolute Maximum Ratings (Ta = 25  
)
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
40  
30  
V
7
V
5
A
Peak Collector Current  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
ICP  
7
0.75  
A
Ptot  
W
Tj  
150  
TStg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
167  
Unit  
Thermal Resistance from Junction Ambient 1)  
1) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.  
®
1 / 5  
Dated: 08/06/2023 Rev: 01  

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