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2SD965AS

更新时间: 2024-09-22 21:11:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 670K
描述
Transistor

2SD965AS 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD965AS 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-89-3L Plastic-Encapsulate Transistors  
SOT-89-3L  
2SD965A TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
z
z
z
Audio amplifier  
Flash unit of camera  
Switching circuit  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Unit  
40  
V
30  
V
7
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
5
A
PC  
750  
150  
-55~150  
mW  
TJ  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=0.1mA, IE=0  
V(BR)CEO IC= 1mA. IB=0  
V(BR)EBO IE= 10μA, IC=0  
40  
30  
7
V
V
ICBO  
IEBO  
VCB= 10V,IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
VEB=7V, IC=0  
hFE(1)  
hFE’(2)  
hFE(3)  
VCE(sat)  
fT  
VCE= 2 V, IC=1mA  
VCE= 2V, IC = 500mA  
VCE= 2V, IC =2A  
200  
150  
DC current gain  
230  
150  
800  
1
Collector-emitter saturation voltage  
Transition frequency  
IC=3A, IB=0.1A  
V
VCE=6V, IC=50mA  
VCB=20 V , IE=0, f=1MHZ  
MHz  
pF  
Out capacitance  
Cob  
50  
CLASSIFICATION OF hFE(2)  
Rank  
Q
R
S
Range  
230-380  
340-600  
560-800  
A,Jun,2011  

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