Datasheet > 2SD965AS

2SD965AS

更新时间： 2024-11-18 21:11:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	670K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SD965AS 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD965AS 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SD965A TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Audio amplifier

Flash unit of camera

Switching circuit

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

750

150

-55~150

℃

T_J

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=0.1mA, I_E=0

V_(BR)CEOI_C= 1mA. I_B=0

V_(BR)EBOI_E= 10μA, I_C=0

I_CBO

I_EBO

V_CB= 10V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=7V, I_C=0

h_FE(1)

h_FE’(2)

h_FE(3)

V_CE(sat)

f_T

V_CE= 2 V, I_C=1mA

V_CE= 2V, I_C= 500mA

V_CE= 2V, I_C=2A

200

150

DC current gain

230

150

800

Collector-emitter saturation voltage

Transition frequency

I_C=3A, I_B=0.1A

V_CE=6V, I_C=50mA

V_CB=20 V , I_E=0, f=1MH_Z

MHz

Out capacitance

Cob

CLASSIFICATION OF h_FE(2)

Rank

Range

230-380

340-600

560-800

A,Jun,2011

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