Datasheet > 2SD965ALS(TO-92)

2SD965ALS(TO-92)

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	103K
描述
Transistor

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数据手册

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2SD965ALS(TO-92) 数据手册

UTC2SD965/A NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

NPN TRANSISTOR

FEATURES

* Collector current up to 5A

* 2SD965 : Collector-Emitter voltage up to 20 V

* 2SD965A : Collector-Emitter voltage up to 30 V

APPLICATIONS

* Audio amplifier

* Flash unit of camera

* Switching circuit

TO-92

1: EMITTER 2: COLLECTOR 3: BASE

*Pb-free plating product number:

2SD965L/2SD965AL

ABSOLUTE MAXIMUM RATINGS _{( Ta=25°C )}

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

Collector-emitter voltage

2SD965

2SD965A

Collector-emitter voltage

Emitter-base voltage

Collector dissipation(Ta=25°C)

Collector current

VCBO

VCEO

750

VCEO

VEBO

Junction Temperature

Storage Temperature

TSTG

150

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

2SD965

SYMBOL

BVCBO

TEST CONDITIONS

Ic=100µA,IE=0

MIN TYP MAX UNIT

Ic=1mA,IB=0

BVCEO

2SD965A

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

BVEBO

ICBO

IEBO

IE=10µA,Ic=0

VCB=10V,IE=0

VEB=7V,Ic=0

100

VCE=2V,Ic=1mA

VCE=2V,Ic=0.5A

VCE=2V,Ic=2A

200

DC current gain(note)

hFE

230

150

800

Collector-emitter saturation voltage

VCE(sat) Ic=3A, IB= 0.1A

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R201-007,D

12 3

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