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2SD965-T PDF预览

2SD965-T

更新时间: 2024-11-21 01:08:43
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科信 - KEXIN /
页数 文件大小 规格书
2页 1250K
描述
NPN Transistors

2SD965-T 数据手册

 浏览型号2SD965-T的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
2SD965  
1.70 0.1  
Features  
Low Collector-Emitter Saturation Voltage  
Large Collector Power Dissipation and Current  
Mini Power Type Package  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
40  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector - Emitter Voltage  
Emitter - Base Voltage  
20  
7
Collector Current - Continuous  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
I
C
5
A
P
C
750  
167  
150  
mW  
/W  
RθJA  
T
J
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
40  
20  
7
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI  
E= 0  
B
I
E
C= 0  
I
CBO  
EBO  
V
V
CB= 10 V , I  
EB= 7V , I  
E
= 0  
100  
100  
1
nA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=3 A, I  
B
=100mA  
=100mA  
V
C
=3 A, I  
B
1.2  
h
FE(1)  
FE(2)  
FE(3)  
V
V
V
V
V
CE= 2V, I  
CE= 2V, I  
CE= 2V, I  
C
C
C
= 1mA  
= 500mA  
= 2A  
200  
150  
DC current gain  
h
230  
150  
950  
50  
h
Collector output capacitance  
Transition frequency  
C
ob  
CB= 20V, I  
E= 0,f=1MHz  
pF  
f
T
CE= 6V, I = 50mA,f=200MHz  
C
MHz  
Classification of hfe(2)  
Type  
Range  
Marking  
2SD965-Q  
230-380  
965Q  
2SD965-R  
340-600  
965R  
2SD965-S  
560-800  
965S  
2SD965-T  
560-950  
965T  
1
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