2SD951

更新时间： 2024-02-21 01:53:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	117K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD951 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD951

DESCRIPTION

·With TO-3 package

·Built-in damper diode

·High voltage capability

APPLICATIONS

·Line-operated horizontal deflection

output applications

PINNING(see fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_EBO

I_C

PARAMETER

Collector-base voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open collector

I_CM

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

P_T

T_C=25℃

℃

T_j

130

T_stg

-65~130

12 3

中文翻译

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