Datasheet > 2SD886-TO-126

2SD886-TO-126

更新时间： 2024-02-13 06:02:22

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
2页	74K
描述
TRANSISTOR (NPN)

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数据手册

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2SD886-TO-126 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SD886 TRANSISTOR (NPN)

TO—126

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM:

W (Tamb=25℃)

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic=5mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=50V, I_E=0

V_EB=3V, I_C=0

µA

I_EBO

Emitter cut-off current

h_FE(1)

_CE=2V, I_C=20mA

100

DC current gain

h_FE(2)

V_CE=2V, I_C=1A

400

0.5

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=2A, I_B=200mA

MHz

V_CE=5V, I_C=100mA

_CB=10V, I_E=0, f=1MHz

C_ob

Collector output capacitance

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