Datasheet > 2SD886

2SD886

更新时间： 2024-02-25 22:47:15

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WEITRON		晶体晶体管
页数	文件大小	规格书
5页	172K
描述
2SB776 PNP Epitaxial Planar Transistors, 2SD886 NPN Epitaxial Planar Transistors

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2SD886 数据手册

2SB776

2SD886

2SB776 PNP Epitaxial Planar Transistors

2SD886 NPN Epitaxial Planar Transistors

TO-126

1.EMITTER

2.COLLECTOR

3.BASE

P b

Lead(Pb)-Free

ABSOLUTE MAXIMUM RATINGS (T =25°C)

Rating

Symbol

PNP/2SB776

Unit

NPN/2SD886

-50

Collector-Emitter Voltage

CEO

-50

-5.0

-3.0

5.0

3.0

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

CBO

EBO

1.0

Total Cevice Disspation Ta=25°C

Junction Temperature

Storage Temperture

+150

Tstg

-55 to +150

°C

Device Marking

2SB776=B776 , 2SD886=D886

ELECTORICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

-50/50

Collect-Emitter Breakdown Voltage (I =-5/5 mA, I =0)

(BR)CEO

(BR)CBO

Collect-Base Breakdown Voltage (I =-100/100 µA, I =0)

-50/50

Emitter-Base Breakdown Voltage (I =-100/100 µA, I =0)

-5.0/5.0

(BR)EBO

Collector Cutoff Current (V =-50/50 V, I =0)

-1.0/1.0

µA

CBO

Emitter Cutoff Current (V =-3.0/3.0Vdc, I =0)

EBO

WEITRON

http://www.weitron.com.tw

1/5

14-Apr-08

12 3 4 5

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