2SB772
2SD882
PNP / NPN Epitaxial Planar Transistors
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
P b
Lead(Pb)-Free
1
2
3
ABSOLUTE MAXIMUM RATINGS (T =25°C)
a
Rating
Symbol
PNP/2SB772
Unit
NPN/2SD882
V
-30
30
Vdc
Collector-Emitter Voltage
CEO
V
-40
-5.0
-3.0
-7.0
40
5.0
3.0
7.0
Vdc
Vdc
Adc
Adc
Adc
W
Collector-Base Voltage
Emitter-Base Voltage
CBO
V
EBO
I
Collector Current(DC)
Collector Current(Pulse)(1)
Base Current
C(DC)
I
C(Pulse)
I
B(Pulse)
-0.6
0.6
P
1.0
10
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
D
P
W
D
T
j
150
-55 to +150
°C
Tstg
°C
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
V
-30/30
-
Vdc
Vdc
Collect-Emitter Breakdown Voltage (I =-10/10 mAdc, I =0)
(BR)CEO
(BR)CBO
C
B
Collect-Base Breakdown Voltage (I =-100/100 µAdc, I =0)
V
-40/40
-
C
E
Emitter-Base Breakdown Voltage (I =-100/100 µAdc, I =0)
V
-5.0/5.0
-
Vdc
E
C
(BR)EBO
Collector Cutoff Current (V =-30/30 Vdc, I =0)
I
-
-
-
-1.0/1.0
-1.0/1.0
-1.0/1.0
µAdc
µAdc
µAdc
CE
B
CEO
Collector Cutoff Current (V =-40/40 Vdc, I =0)
I
CB
E
CBO
Emitter Cutoff Current (V =-6.0/6.0Vdc, I =0)
I
EB
C
EBO
NOTE: 1.PW ≤ 350us, duty cycle ≤ 2%
WEITRON
http://www.weitron.com.tw
1/5
Rev.B 14-Aug-07